1 - 4 ? 2000 ixys all rights reserved igbt combi pack preliminary data sheet 95592a (3/97) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 3 ma, v ge = 0 v 1000 v v ge(th) i c = 250 a, v ge = v ge 2.5 5.5 v i ces v ce = 0.8, v ces t j = 25 c 300 a v ge = 0 v t j = 125 c3ma i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = i ce90 , v ge = 15 12n100 3.5 v 12n100a 4.0 v symbol test conditions maximum ratings v ces t j = 25 c to 150 c 1000 v v cgr t j = 25 c to 150 c; r ge = 1 m 1000 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c24a i c90 t c = 90 c12a i cm t c = 25 c, 1 ms 48 a ssoa v ge = 15 v, t vj = 125 c, r g = 150 i cm = 24 a (rbsoa) clamped inductive load, l = 300 h @ 0.8 v ces p c t c = 25 c 100 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c m d mounting torque with screw m3 0.45/4 nm/lb.in. mounting torque with screw m3.5 0.55/5 nm/lb.in. weight 4g maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s v ces i c25 v ce(sat) ixga/ixgp12n100u1 1000 v 24 a 3.5 v ixga/ixgp12n100au1 1000 v 24 a 4.0 v features ? international standard packages jedec to-220ab and to-263aa igbt with antiparallel fred in one package second generation hdmos tm process low v ce(sat) - for minimum on-state conduction losses mos gate turn-on - drive simplicity fast recovery expitaxial diode (fred) - soft recovery with low i rm applications ac motor speed control dc servo and robot drives dc choppers uninterruptible power supplies (ups) switch-mode and resonant-mode power supplies advantages easy to mount with one screw space savings (two devices in one package) reduces assembly time and cost high power density to-263 aa (ixga) g c e to-220ab(ixgp) g e c (tab) ixys reserves the right to change limits, test conditions, and dimensions.
2 - 4 ? 2000 ixys all rights reserved symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = i c90 ; v ce = 10 v, 6 10 s pulse test, t 300 s, duty cycle 2 % q g 65 90 nc q ge i c = i c90 , v ge = 15 v, v ce = 0.5 v ces 820nc q gc 24 45 nc t d(on) 100 ns t ri 200 ns t d(off) 850 1000 ns t fi 12n100a 500 700 ns 12n100 800 1000 ns e off 12n100a 4 6 mj t d(on) 100 ns t ri 200 ns e on 1.1 mj t d(off) 900 ns t fi 12n100a 950 ns 12n100 1250 ns e off 12n100a 8 mj 12n100 10 mj r thjc 1.25 k/w r thck 0.25 k/w inductive load, t j = 25 c i c = i c90 , v ge = 15 v, l = 300 h v ce = 800 v, r g = r off = 120 remarks: switching times may increase for v ce (clamp) > 0.8 v ces , higher t j or increased r g inductive load, t j = 125 c i c = i c90 , v ge = 15 v, l = 300 h v ce = 800 v, r g = r off = 120 remarks: switching times may increase for v ce (clamp) > 0.8 v ces , higher t j or increased r g reverse diode (fred) characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. v f i f =8a, v ge = 0 v, 2.75 v pulse test, t 300 s, duty cycle d 2 % i rm i f = i c90 , v ge = 0 v, -di f /dt = 100 a/ s 6.5 a t rr v r = 100 v, t j = 125 c 140 ns i f = 1 a, -di/dt = 50 a/ s, v r = 30 v t j = 25 c5060ns r thjc 2.5 k/w to-263 aa (ixga) outline dim. millimeter inches min. max. min. max. a 4.06 4.83 .160 .190 a1 2.03 2.79 .080 .110 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.46 0.74 .018 .029 c2 1.14 1.40 .045 .055 d 8.64 9.65 .340 .380 d1 7.11 8.13 .280 .320 e 9.65 10.29 .380 .405 e1 6.86 8.13 .270 .320 e 2.54 bsc .100 bsc l 14.61 15.88 .575 .625 l1 2.29 2.79 .090 .110 l2 1.02 1.40 .040 .055 l3 1.27 1.78 .050 .070 l4 0 0.38 0 .015 r 0.46 0.74 .018 .029 to-220 ab (ixgp) outline dim. millimeter inches min. max. min. max. a 12.70 13.97 0.500 0.550 b 14.73 16.00 0.580 0.630 c 9.91 10.66 0.390 0.420 d 3.54 4.08 0.139 0.161 e 5.85 6.85 0.230 0.270 f 2.54 3.18 0.100 0.125 g 1.15 1.65 0.045 0.065 h 2.79 5.84 0.110 0.230 j 0.64 1.01 0.025 0.040 k 2.54 bsc 0.100 bsc m 4.32 4.82 0.170 0.190 n 1.14 1.39 0.045 0.055 q 0.35 0.56 0.014 0.022 r 2.29 2.79 0.090 0.110 ixga12n100u1 ixgp12n100u1 IXGA12N100AU1 ixgp12n100au1 min. recommended footprint ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
3 - 4 ? 2000 ixys all rights reserved v ge - volts 24681012 i c - amperes 0 10 20 30 40 50 v ce - volts 0246810 i c - amperes 0 10 20 30 40 50 v ce -volts 0 5 10 15 20 25 30 35 40 capacitance - pf 10 100 1000 t j - degrees c 25 50 75 100 125 150 v ce (sat) - normalized 0.6 0.8 1.0 1.2 1.4 1.6 v ce - volts 0 4 8 12 16 20 i c - amperes 0 20 40 60 80 100 13v 11v 9v 7v v ce = 10v t j = 25 c v ge = 15v t j = 25 c i c = 6a i c = 12a i c = 24a f = 1mhz 7v v ge = 15v t j = 25 c v ce - volts 0246810 i c - amperes 0 10 20 30 40 50 t j = 125 c c iss c oss v ge = 15v 13v 11v v ge = 15v 13v 11v 9v 7v 9v c rss t j = 125 c ixga12n100u1 ixgp12n100u1 IXGA12N100AU1 ixgp12n100au1 figure 4. temperature dependence of v ce(sat) figure 2. extended output characteristics figure 1. saturation voltage characteristics figure 6. capacitance curves figure 5. admittance curves figure 3. saturation voltage characteristics
4 - 4 ? 2000 ixys all rights reserved ixga12n100u1 ixgp12n100u1 IXGA12N100AU1 ixgp12n100au1 figure 7. dependence of tfi and e off on i c . figure 11. transient thermal resistance figure 8. dependence of tfi and e off on r g . figure 9. gate charge figure 10. turn-off safe operating area pulse width - seconds 0.00001 0.0001 0.001 0.01 0.1 1 z thjc (k/w) 0.001 0.01 0.1 1 v ce - volts 0 200 400 600 800 1000 i c - amperes 0.1 1 10 100 q g - nanocoulombs 0 1530456075 v ge - volts 0 3 6 9 12 15 r g - ohms 0 306090120150 e (off) - millijoules 0 1 2 3 4 5 t fi - nanoseconds 0 200 400 600 800 1000 i c - amperes 0 5 10 15 20 e (off) - millijoules 1 2 3 4 5 t fi - nanoseconds 800 900 1000 1100 1200 v ce = 150v i c = 30a t fi e (off) t j = 125c r g = 4.7 dv/dt < 5v/ns d=0.5 d=0.1 d=0.05 d=0.01 single pulse d = duty cycle r g = 120 t j = 125c 24 t j = 125c e (off) d=0.2 d=0.02 i c = 12a t fi
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